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Beide Seiten der vorigen Revision Vorhergehende Überarbeitung Nächste Überarbeitung | Vorhergehende Überarbeitung | ||
electrical_engineering_2:the_electrostatic_field [2023/03/29 09:31] – mexleadmin | electrical_engineering_2:the_electrostatic_field [2025/03/20 10:56] (aktuell) – mexleadmin | ||
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Zeile 1: | Zeile 1: | ||
- | ====== 1. The Electrostatic Field ====== | + | ====== 1 The Electrostatic Field ====== |
< | < | ||
Zeile 9: | Zeile 9: | ||
</ | </ | ||
- | From everyday | + | Everyday |
< | < | ||
< | < | ||
Zeile 17: | Zeile 16: | ||
</ | </ | ||
- | In the first chapter of the last semester, we had already considered the charge as the central quantity of electricity and understood | + | We had already considered the charge as the central quantity of electricity |
- | First, we will differentiate some terms: | + | First, we shall define certain |
- | - **{{wp> | + | - **{{wp> |
- | - **{{wp> | + | - **{{wp> |
- | - **{{wp> | + | - **{{wp> |
- | In this chapter, only electrostatics are considered. The magnetic fields are therefore | + | Only electrostatics is discussed in this chapter. |
- | Also, electrodynamics is not considered | + | Furthermore, electrodynamics is not covered |
~~PAGEBREAK~~ ~~CLEARFIX~~ | ~~PAGEBREAK~~ ~~CLEARFIX~~ | ||
Zeile 52: | Zeile 51: | ||
<panel type=" | <panel type=" | ||
- | The simulation in <imgref ImgNr02> | + | The simulation in was already |
- | In the simulation, please position | + | Place a negative charge $Q$ in the middle |
- | For impact analysis, a sample charge $q$ is placed | + | A sample charge $q$ is placed |
< | < | ||
Zeile 65: | Zeile 64: | ||
</ | </ | ||
- | The concept of a field shall now be briefly | + | The concept of a field will now be briefly |
- | - The introduction of the field separates | + | - The introduction of the field distinguishes |
- | - The charge $Q$ causes the field in space. | + | - The field in space is caused by the charge $Q$. |
- | - The charge $q$ in space feels a force as an effect of the field. | + | - As a result of the field, the charge $q$ in space feels a force. |
- | - This distinction | + | - This distinction |
- | - As with physical quantities, there are different-dimensional fields: | + | -There are different-dimensional fields, just like physical quantities: |
- | - In a **scalar field**, | + | - In a **scalar field**, each point in space is assigned a single number. \\ For example, |
- | - temperature field $T(\vec{x})$ on the weather map or in an object | + | - a temperature field $T(\vec{x})$ on a weather map or in an object |
- | - pressure field $p(\vec{x})$ | + | - a pressure field $p(\vec{x})$ |
- | - In a **vector field**, each point in space is assigned several numbers in the form of a vector. This reflects the action along the spatial coordinates. \\ For example. | + | - Each point in space in a **vector field** is assigned several numbers in the form of a vector. This reflects the action |
- | - gravitational field $\vec{g}(\vec{x})$ pointing to the center of mass of the object. | + | - gravitational field $\vec{g}(\vec{x})$ pointing to the object' |
- electric field $\vec{E}(\vec{x})$ | - electric field $\vec{E}(\vec{x})$ | ||
- magnetic field $\vec{H}(\vec{x})$ | - magnetic field $\vec{H}(\vec{x})$ | ||
- | - If each point in space is associated with a two- or more-dimensional physical quantity - that is a tensor | + | - A tensor field is one in which each point in space is associated with a two- or more-dimensional physical quantity - that is, a tensor. Tensor fields are useful |
- | Vector fields | + | Vector fields |
- Effects along spatial axes $x$, $y$ and $z$ (Cartesian coordinate system). | - Effects along spatial axes $x$, $y$ and $z$ (Cartesian coordinate system). | ||
- Effect in magnitude and direction vector (polar coordinate system) | - Effect in magnitude and direction vector (polar coordinate system) | ||
Zeile 92: | Zeile 91: | ||
==== The Electric Field ==== | ==== The Electric Field ==== | ||
- | Thus, to determine the electric field, a measure | + | To determine the electric field, a measurement |
\begin{align*} | \begin{align*} | ||
Zeile 98: | Zeile 97: | ||
\end{align*} | \end{align*} | ||
- | To obtain a measure of the magnitude of the electric field, the force on a (fictitious) sample charge $q$ is now considered. | + | The force on a (fictitious) sample charge $q$ is now considered |
\begin{align*} | \begin{align*} | ||
Zeile 105: | Zeile 104: | ||
\end{align*} | \end{align*} | ||
- | The left part is therefore | + | As a result, the left part is a measure of the magnitude of the field, independent of the size of the sample charge $q$. Thus, the magnitude of the electric field is given by |
<WRAP centeralign> | <WRAP centeralign> | ||
Zeile 119: | Zeile 118: | ||
<callout icon=" | <callout icon=" | ||
- | - The test charge $q$ is always considered to be posi**__t__**ive (mnemonic: t = +). It is used only as a thought experiment and has no retroactive effect on the sampled charge $Q$. | + | - The test charge $q$ is always considered to be posi**__t__**ive (mnemonic: t = +). It is only used as a thought experiment and has no retroactive effect on the sampled charge $Q$. |
- The sampled charge here is always a point charge. | - The sampled charge here is always a point charge. | ||
</ | </ | ||
Zeile 125: | Zeile 124: | ||
<callout icon=" | <callout icon=" | ||
- | A charge $Q$ generates | + | At a measuring point $P$, a charge $Q$ produces |
- the magnitude $|\vec{E}|=\Bigl| {{1} \over {4\pi\cdot\varepsilon}} \cdot {{Q_1} \over {r^2}} \Bigl| $ and | - the magnitude $|\vec{E}|=\Bigl| {{1} \over {4\pi\cdot\varepsilon}} \cdot {{Q_1} \over {r^2}} \Bigl| $ and | ||
- | - the direction of the force $\vec{F_C}$ | + | - the direction of the force $\vec{F_C}$ |
- | Be aware, that in English courses and literature $\vec{E}, $ is simply | + | Be aware, that in English courses and literature $\vec{E}, $ is simply |
</ | </ | ||
Zeile 199: | Zeile 198: | ||
</ | </ | ||
- | <panel type=" | + | <panel type=" |
Sketch the field line plot for the charge configurations given in <imgref ImgNr04> | Sketch the field line plot for the charge configurations given in <imgref ImgNr04> | ||
Zeile 256: | Zeile 255: | ||
In previous chapters, only single charges (e.g. $Q_1$, $Q_2$) were considered. | In previous chapters, only single charges (e.g. $Q_1$, $Q_2$) were considered. | ||
* The charge $Q$ was previously reduced to a **point charge**. \\ This can be used, for example, for the elementary charge or for extended charged objects from a large distance. The distance is sufficiently large if the ratio between the largest object extent and the distance to the measurement point $P$ is small. | * The charge $Q$ was previously reduced to a **point charge**. \\ This can be used, for example, for the elementary charge or for extended charged objects from a large distance. The distance is sufficiently large if the ratio between the largest object extent and the distance to the measurement point $P$ is small. | ||
- | * If the charges are lined up along a line, this is called | + | * If the charges are lined up along a line, this is referred to as a **line charge**. \\ Examples of this are a straight trace on a circuit board or a piece of wire. Furthermore, |
* It is spoken of as an **area charge** when the charge is distributed over an area. \\ Examples of this are the floor or a plate of a capacitor. Again, an extended charged object can be considered when two dimensions are no longer small in relation to the distance (e.g. surface of the earth). Again, a (surface) charge density $\rho_A$ can be determined: <WRAP centeralign> | * It is spoken of as an **area charge** when the charge is distributed over an area. \\ Examples of this are the floor or a plate of a capacitor. Again, an extended charged object can be considered when two dimensions are no longer small in relation to the distance (e.g. surface of the earth). Again, a (surface) charge density $\rho_A$ can be determined: <WRAP centeralign> | ||
* Finally, a **space charge** is the term for charges that span a volume. \\ Here examples are plasmas or charges in extended objects (e.g. the doped volumes in a semiconductor). As with the other charge distributions, | * Finally, a **space charge** is the term for charges that span a volume. \\ Here examples are plasmas or charges in extended objects (e.g. the doped volumes in a semiconductor). As with the other charge distributions, | ||
Zeile 301: | Zeile 300: | ||
{{youtube> | {{youtube> | ||
</ | </ | ||
+ | |||
+ | {{page> | ||
+ | {{page> | ||
+ | {{page> | ||
+ | |||
=====1.3 Work and Potential ===== | =====1.3 Work and Potential ===== | ||
Zeile 331: | Zeile 335: | ||
First, the situation of a charge in a homogeneous electric field shall be considered. As we have seen so far, the magnitude of $E$ is constant and the field lines are parallel. Now a positive charge $q$ is to be brought into this field. | First, the situation of a charge in a homogeneous electric field shall be considered. As we have seen so far, the magnitude of $E$ is constant and the field lines are parallel. Now a positive charge $q$ is to be brought into this field. | ||
- | If this charge would be free movable (e.g. electron in vacuum or an extended conductor) it would be accelerated along field lines. Thus its kinetic energy increases. Because the whole system of plates (for field generation) and charge however does not change its energetic state - thermodynamically the system is closed. From this follows: if the kinetic energy increases, the potential energy must decrease. | + | If this charge would be free movable (e.g. electron in a vacuum or an extended conductor) it would be accelerated along field lines. Thus its kinetic energy increases. Because the whole system of plates (for field generation) and charge however does not change its energetic state - thermodynamically the system is closed. From this follows: if the kinetic energy increases, the potential energy must decrease. |
< | < | ||
Zeile 420: | Zeile 424: | ||
- Returning to the starting point from any point $A$ after a closed circuit, the __circuit voltage__ along the closed path is 0. \\ A closed path is mathematically expressed as a ring integral: \begin{align} U = \oint \vec{E} \cdot {\rm d} \vec{s} = 0 \end{align} | - Returning to the starting point from any point $A$ after a closed circuit, the __circuit voltage__ along the closed path is 0. \\ A closed path is mathematically expressed as a ring integral: \begin{align} U = \oint \vec{E} \cdot {\rm d} \vec{s} = 0 \end{align} | ||
- Or spoken differently: | - Or spoken differently: | ||
- | - A field $\vec{X}$ which satisfies the condition $\oint \vec{X} \cdot {\rm d} \vec{s}=0$ is called | + | - A field $\vec{X}$ which satisfies the condition $\oint \vec{X} \cdot {\rm d} \vec{s}=0$ is referred to as __vortex-free__ or __potential field__. \\ From the potential difference, or the voltage, the work in the electrostatic field results as: \begin{align*} \boxed{W_{ \rm AB}= q \cdot U_{ \rm AB}} \end{align*} |
</ | </ | ||
Zeile 435: | Zeile 439: | ||
Once a charge $q$ moves perpendicular to the field lines, it experiences neither energy gain nor loss. | Once a charge $q$ moves perpendicular to the field lines, it experiences neither energy gain nor loss. | ||
The voltage along this path is $0~{ \rm V}$. All points where the voltage of $0~{ \rm V}$ is applied are at the same potential level. | The voltage along this path is $0~{ \rm V}$. All points where the voltage of $0~{ \rm V}$ is applied are at the same potential level. | ||
- | The connection of these points | + | The connection of these points |
* equipotential lines for a 2-dimensional representation of the field. | * equipotential lines for a 2-dimensional representation of the field. | ||
* equipotential surfaces for a 3-dimensional field | * equipotential surfaces for a 3-dimensional field | ||
Zeile 516: | Zeile 520: | ||
\begin{align*} | \begin{align*} | ||
U_{ \rm AB} & | U_{ \rm AB} & | ||
- | U_{ \rm AB} & | + | U_{ \rm AB} & |
U_{ \rm AB} & | U_{ \rm AB} & | ||
U & | U & | ||
Zeile 522: | Zeile 526: | ||
</ | </ | ||
- | |||
- | ==== Tasks ==== | ||
- | |||
- | {{page> | ||
- | {{page> | ||
- | {{page> | ||
=====1.4 Conductors in the Electrostatic Field ===== | =====1.4 Conductors in the Electrostatic Field ===== | ||
Zeile 623: | Zeile 621: | ||
* The field lines leave the surface again at right angles. Again, a parallel component would cause a charge shift in the metal. | * The field lines leave the surface again at right angles. Again, a parallel component would cause a charge shift in the metal. | ||
- | This effect of charge displacement in conductive objects by an electrostatic field is called | + | This effect of charge displacement in conductive objects by an electrostatic field is referred to as **electrostatic induction** (in German: // |
Induced charges can be separated (<imgref ImgNr11> right). | Induced charges can be separated (<imgref ImgNr11> right). | ||
- | If we look at the separated induced charges without the external field, their field is again just as strong in magnitude as the external field only in opposite direction. | + | If we look at the separated induced charges without the external field, their field is again just as strong in magnitude as the external field only in the opposite direction. |
<callout icon=" | <callout icon=" | ||
Zeile 669: | Zeile 667: | ||
{{page> | {{page> | ||
+ | <wrap anchor # | ||
<panel type=" | <panel type=" | ||
Zeile 683: | Zeile 682: | ||
- | --> Answer | + | # |
$\varrho_2 < \varrho_3 < \varrho_1 < \varrho_4$ | $\varrho_2 < \varrho_3 < \varrho_1 < \varrho_4$ | ||
Zeile 690: | Zeile 689: | ||
< | < | ||
</ | </ | ||
- | {{url> | + | {{url> |
</ | </ | ||
- | <-- | + | |
+ | # | ||
+ | |||
</ | </ | ||
- | =====1.5 The Electric Displacement Field and Gauss' | + | =====1.5 The Electric Displacement Field and Gauss' |
< | < | ||
Zeile 821: | Zeile 824: | ||
The " | The " | ||
This can be compared with a bordered swamp area with water sources and sinks: | This can be compared with a bordered swamp area with water sources and sinks: | ||
- | * The sources in the marsh correspond to the positive charges, and the sinks to the negative charges. The formed water corresponds to the $D$-field. | + | * The sources in the marsh correspond to the positive charges and the sinks to the negative charges. The formed water corresponds to the $D$-field. |
* The sum of all sources and sinks equals in this case just the water stepping over the edge. | * The sum of all sources and sinks equals in this case just the water stepping over the edge. | ||
Zeile 877: | Zeile 880: | ||
<panel type=" | <panel type=" | ||
- | An ideal plate capacitor with a distance of $d_0 = 7 ~{ \rm mm}$ between the plates | + | An ideal plate capacitor with a distance of $d_0 = 7 ~{ \rm mm}$ between the plates |
The source gets disconnected. After this, the distance between the plates gets enlarged to $d_1 = 7 ~{ \rm cm}$. | The source gets disconnected. After this, the distance between the plates gets enlarged to $d_1 = 7 ~{ \rm cm}$. | ||
Zeile 898: | Zeile 901: | ||
An ideal plate capacitor with a distance of $d_0 = 6 ~{ \rm mm}$ between the plates and with air as dielectric ($\varepsilon_0=1$) is charged to a voltage of $U_0 = 5~{ \rm kV}$. | An ideal plate capacitor with a distance of $d_0 = 6 ~{ \rm mm}$ between the plates and with air as dielectric ($\varepsilon_0=1$) is charged to a voltage of $U_0 = 5~{ \rm kV}$. | ||
- | The source remains connected to the capacitor. In the air gap between the plates, a glass plate with $d_{ \rm g} = 2 ~{ \rm mm}$ and $\varepsilon_{ \rm r} = 8$ is introduced parallel to the capacitor plates. | + | The source remains connected to the capacitor. In the air gap between the plates, a glass plate with $d_{ \rm g} = 4 ~{ \rm mm}$ and $\varepsilon_{ \rm r} = 8$ is introduced parallel to the capacitor plates. |
- | - Calculate the partial voltages on the glas $U_{ \rm g}$ and on the air gap $U_{ \rm a}$. | + | 1. Calculate the partial voltages on the glas $U_{ \rm g}$ and on the air gap $U_{ \rm a}$. |
- | - What would be the maximum allowed thickness of a glass plate, when the electric field in the air-gap shall not exceed $E_{ \rm max}=12~{ \rm kV/cm}$? | + | |
- | <button size=" | + | # |
* build a formula for the sum of the voltages first | * build a formula for the sum of the voltages first | ||
* How is the voltage related to the electric field of a capacitor? | * How is the voltage related to the electric field of a capacitor? | ||
- | </ | + | # |
- | <button size=" | + | # |
- | - $U_{ \rm a} = 4~{ \rm kV}$, $U_{ \rm g} = 1 ~{ \rm kV}$ | + | |
- | - $d_{ \rm g} = 5.96~{ \rm mm}$ | + | The sum of the voltages across the glass and the air gap gives the total voltage $U_0$ and each individual voltage is given by the $E$-field in the individual material by $E = {{U}\over{d}}$: |
- | </ | + | \begin{align*} |
+ | U_0 &= U_{\rm g} + U_{\rm a} \\ | ||
+ | &= E_{\rm g} \cdot d_{\rm g} + E_{\rm a} \cdot d_{\rm a} | ||
+ | \end{align*} | ||
+ | |||
+ | The displacement field $D$ must be continuous across the different materials since it is only based on the charge $Q$ on the plates. | ||
+ | \begin{align*} | ||
+ | D_{\rm g} &= D_{\rm a} \\ | ||
+ | \varepsilon_0 \varepsilon_{\rm r, g} \cdot E_{\rm g} &= \varepsilon_0 | ||
+ | \end{align*} | ||
+ | |||
+ | Therefore, we can put $E_\rm a= \varepsilon_{\rm r, g} \cdot E_\rm g $ into the formula of the total voltage and re-arrange to get $E_\rm g$: | ||
+ | \begin{align*} | ||
+ | U_0 &= E_{\rm g} \cdot d_{\rm g} + \varepsilon_{\rm r, g} \cdot E_{\rm g} \cdot d_{\rm a} \\ | ||
+ | &= E_{\rm g} \cdot ( d_{\rm g} + \varepsilon_{\rm r, g} \cdot d_{\rm a}) \\ | ||
+ | |||
+ | \rightarrow E_{\rm g} &= {{U_0}\over{d_{\rm g} + \varepsilon_{\rm r, g} \cdot d_{\rm a}}} | ||
+ | \end{align*} | ||
+ | |||
+ | Since we know that the distance of the air gap is $d_{\rm a} = d_0 - d_{\rm a}$ we can calculate: | ||
+ | \begin{align*} | ||
+ | E_{\rm g} &= {{5' | ||
+ | & | ||
+ | \end{align*} | ||
+ | |||
+ | By this, the individual voltages can be calculated: | ||
+ | \begin{align*} | ||
+ | U_{ \rm g} &= E_{\rm g} \cdot d_\rm g &&= 250 ~\rm{{kV}\over{m}} \cdot 0.004~\rm m &= 1 ~{\rm kV}\\ | ||
+ | U_{ \rm a} &= U_0 - U_{ \rm g} &&= 5 ~{\rm kV} - 1 ~{\rm kV} & | ||
+ | |||
+ | \end{align*} | ||
+ | # | ||
+ | |||
+ | |||
+ | # | ||
+ | $U_{ \rm a} = 4~{ \rm kV}$, $U_{ \rm g} = 1 ~{ \rm kV}$ | ||
+ | # | ||
+ | |||
+ | |||
+ | 2. What would be the maximum allowed thickness of a glass plate, when the electric field in the air-gap shall not exceed | ||
+ | |||
+ | # | ||
+ | Again, we can start with the sum of the voltages across the glass and the air gap, such as the formula we got from the displacement field: $D = \varepsilon_0 \varepsilon_{\rm r, g} \cdot E_{\rm g} = \varepsilon_0 | ||
+ | Now we shall eliminate $E_\rm g$, since $E_\rm a$ is given in the question. | ||
+ | \begin{align*} | ||
+ | U_0 & | ||
+ | &= {{E_\rm a}\over{\varepsilon_{\rm r, | ||
+ | \end{align*} | ||
+ | |||
+ | The distance $d_\rm a$ for the air is given by the overall distance $d_0$ and the distance for glass $d_\rm g$: | ||
+ | \begin{align*} | ||
+ | d_{\rm a} = d_0 - d_{\rm g} | ||
+ | \end{align*} | ||
+ | |||
+ | This results in: | ||
+ | \begin{align*} | ||
+ | U_0 &= {{E_{\rm a}}\over{\varepsilon_{\rm r,g}}} \cdot d_{\rm g} + E_{\rm a} \cdot (d_0 - d_{\rm g}) \\ | ||
+ | {{U_0}\over{E_{\rm a} }} &= {{1}\over{\varepsilon_{\rm r,g}}} \cdot d_{\rm g} + d_0 - d_{\rm g} \\ | ||
+ | & | ||
+ | d_{\rm g} &= { { {{U_0}\over{E_{\rm a} }} - d_0 } \over { {{1}\over{\varepsilon_{\rm r,g}}} - 1 } } & | ||
+ | \end{align*} | ||
+ | |||
+ | With the given values: | ||
+ | \begin{align*} | ||
+ | d_{\rm g} &= { { 0.006 {~\rm m} - {{5 {~\rm kV} }\over{ 12 {~\rm kV/cm}}} } \over { 1 - {{1}\over{8}} } } &= { {{8}\over{7}} } \left( { 0.006 - {{5 }\over{ 1200}} } \right) | ||
+ | \end{align*} | ||
+ | # | ||
+ | |||
+ | |||
+ | # | ||
+ | $d_{ \rm g} = 2.10~{ \rm mm}$ | ||
+ | # | ||
</ | </ | ||
Zeile 930: | Zeile 1003: | ||
<button size=" | <button size=" | ||
- | - $C = 0.5~pF$ | + | - $C = 0.5~{ \rm pF}$ |
- $C_{\infty} = 0.33~{ \rm pF}$ | - $C_{\infty} = 0.33~{ \rm pF}$ | ||
</ | </ | ||
Zeile 1007: | Zeile 1080: | ||
~~PAGEBREAK~~ ~~CLEARFIX~~ | ~~PAGEBREAK~~ ~~CLEARFIX~~ | ||
<callout icon=" | <callout icon=" | ||
- | - The material constant $\varepsilon_{ \rm r}$ is called | + | - The material constant $\varepsilon_{ \rm r}$ is referred to as relative permittivity, |
- Relative permittivity is unitless and indicates how much the electric field decreases with the presence of material for the same charge. | - Relative permittivity is unitless and indicates how much the electric field decreases with the presence of material for the same charge. | ||
- The relative permittivity $\varepsilon_{ \rm r}$ is always greater than or equal to 1 for dielectrics (i.e., nonconductors). | - The relative permittivity $\varepsilon_{ \rm r}$ is always greater than or equal to 1 for dielectrics (i.e., nonconductors). | ||
- | - The relative permittivity depends on the polarizability of the material, i.e. the possibility | + | - The relative permittivity depends on the polarizability of the material, i.e. the possibility |
</ | </ | ||
<callout icon=" | <callout icon=" | ||
- | If now the relative permittivity $\varepsilon_{ \rm r}$ depends on the possibility | + | Suppose |
</ | </ | ||
Zeile 1044: | Zeile 1117: | ||
* One says: The insulator breaks down. This means that above this electric field, a current can flow through the insulator. | * One says: The insulator breaks down. This means that above this electric field, a current can flow through the insulator. | ||
* Examples are: Lightning in a thunderstorm, | * Examples are: Lightning in a thunderstorm, | ||
- | * The maximum electric field $E_0$ is called | + | * The maximum electric field $E_0$ is referred to as ** dielectric strength** (in German: // |
* $E_0$ depends on the material (see <tabref tab02>), but also on other factors (temperature, | * $E_0$ depends on the material (see <tabref tab02>), but also on other factors (temperature, | ||
Zeile 1091: | Zeile 1164: | ||
* This makes it possible to build up an electric field in the capacitor without charge carriers moving through the dielectric. | * This makes it possible to build up an electric field in the capacitor without charge carriers moving through the dielectric. | ||
* The characteristic of the capacitor is the capacitance $C$. | * The characteristic of the capacitor is the capacitance $C$. | ||
- | * In addition to the capacitance, | + | * In addition to the capacitance, |
* Examples are | * Examples are | ||
* the electrical component " | * the electrical component " | ||
Zeile 1123: | Zeile 1196: | ||
This relationship can be examined in more detail in the following simulation: | This relationship can be examined in more detail in the following simulation: | ||
- | -->capacitor | + | --> |
If the simulation is not displayed optimally, [[https:// | If the simulation is not displayed optimally, [[https:// | ||
Zeile 1171: | Zeile 1244: | ||
- In the multilayer capacitor, there are again two electrodes. Here, too, the area $A$ (and thus the capacitance $C$) is multiplied by the finger-shaped interlocking. | - In the multilayer capacitor, there are again two electrodes. Here, too, the area $A$ (and thus the capacitance $C$) is multiplied by the finger-shaped interlocking. | ||
- Ceramic is used here as the dielectric. | - Ceramic is used here as the dielectric. | ||
- | - The multilayer ceramic capacitor is also called | + | - The multilayer ceramic capacitor is also referred to as KerKo or MLCC. |
- The variant shown in (2) is an SMD variant (surface mound device). | - The variant shown in (2) is an SMD variant (surface mound device). | ||
- Disk capacitor | - Disk capacitor | ||
- A ceramic is also used as a dielectric for the disk capacitor. This is positioned as a round disc between two electrodes. | - A ceramic is also used as a dielectric for the disk capacitor. This is positioned as a round disc between two electrodes. | ||
- Disc capacitors are designed for higher voltages, but have a low capacitance (in the microfarad range). | - Disc capacitors are designed for higher voltages, but have a low capacitance (in the microfarad range). | ||
- | - **{{wp> | + | - **{{wp> |
- In electrolytic capacitors, the dielectric is an oxide layer formed on the metallic electrode. the second electrode is the liquid or solid electrolyte. | - In electrolytic capacitors, the dielectric is an oxide layer formed on the metallic electrode. the second electrode is the liquid or solid electrolyte. | ||
- Different metals can be used as the oxidized electrode, e.g. aluminum, tantalum or niobium. | - Different metals can be used as the oxidized electrode, e.g. aluminum, tantalum or niobium. | ||
Zeile 1182: | Zeile 1255: | ||
- Important for the application is that it is a polarized capacitor. I.e. it may only be operated in one direction with DC voltage. Otherwise, a current can flow through the capacitor, which destroys it and is usually accompanied by an explosive expansion of the electrolyte. To avoid reverse polarity, the negative pole is marked with a dash. | - Important for the application is that it is a polarized capacitor. I.e. it may only be operated in one direction with DC voltage. Otherwise, a current can flow through the capacitor, which destroys it and is usually accompanied by an explosive expansion of the electrolyte. To avoid reverse polarity, the negative pole is marked with a dash. | ||
- The electrolytic capacitor is built up wrapped and often has a cross-shaped predetermined breaking point at the top for gas leakage. | - The electrolytic capacitor is built up wrapped and often has a cross-shaped predetermined breaking point at the top for gas leakage. | ||
- | - **{{wp> | + | - **{{wp> |
- A material similar to a "chip bag" is used as an insulator: a plastic film with a thin, metalized layer. | - A material similar to a "chip bag" is used as an insulator: a plastic film with a thin, metalized layer. | ||
- The construction shows a high pulse load capacitance and low internal ohmic losses. | - The construction shows a high pulse load capacitance and low internal ohmic losses. | ||
- In the event of electrical breakdown, the foil enables " | - In the event of electrical breakdown, the foil enables " | ||
- | - With some manufacturers, | + | - With some manufacturers, |
- **{{wp> | - **{{wp> | ||
- As a dielectric is - similar to the electrolytic capacitor - very thin. In the actual sense, there is no dielectric at all. | - As a dielectric is - similar to the electrolytic capacitor - very thin. In the actual sense, there is no dielectric at all. | ||
Zeile 1218: | Zeile 1291: | ||
<callout icon=" | <callout icon=" | ||
- | - There are polarized capacitors. With these, the installation direction and current flow must be observed, as otherwise an explosion can occur. | + | - There are polarized capacitors. With these, the installation direction and current flow must be observed, as otherwise, an explosion can occur. |
- Depending on the application - and the required size, dielectric strength, and capacitance - different types of capacitors are used. | - Depending on the application - and the required size, dielectric strength, and capacitance - different types of capacitors are used. | ||
- The calculation of the capacitance is usually __not__ via $C = \varepsilon_0 \cdot \varepsilon_{ \rm r} \cdot {{A}\over{l}} $ . The capacitance value is given. | - The calculation of the capacitance is usually __not__ via $C = \varepsilon_0 \cdot \varepsilon_{ \rm r} \cdot {{A}\over{l}} $ . The capacitance value is given. | ||
Zeile 1324: | Zeile 1397: | ||
\end{align*} | \end{align*} | ||
\begin{align*} | \begin{align*} | ||
- | \boxed{ U_k = const} | + | \boxed{ U_k = {\rm const.}} |
\end{align*} | \end{align*} | ||
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Zeile 1370: | Zeile 1443: | ||
- | Up to now was assumed only one dielectric | + | Up until this point, it was assumed |
- | Thereby several | + | By doing this, various |
- | The following | + | It is possible to tell the following |
- | - **layers are parallel to capacitor plates - dielectrics in series**: The boundary layers are __parallel__ to the capacitor plates. \\ So, the different dielectrics are _perpendicular__ | + | - **layers are parallel to capacitor plates - dielectrics in series**: |
- | - **layers are perpendicular to capacitor plates - dielectrics in parallel**: The boundary layers are __perpendicular__ to the capacitor plates. \\ So, the different dielectrics are __parallel__ to the field lines. | + | - **layers are perpendicular to capacitor plates - dielectrics in parallel**: |
- | - **arbitrary configuration**: | + | - **arbitrary configuration**: |
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Zeile 1530: | Zeile 1603: | ||
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- | Since $\vec{D} = \varepsilon_{0} \varepsilon_{ \rm r} \cdot \vec{E}$ the direction of the fields must be the same. \\ | + | Since $\vec{D} = \varepsilon_{0} \varepsilon_{ \rm r} \cdot \vec{E} |
Using the fields, we can now derive the change in the angle: | Using the fields, we can now derive the change in the angle: | ||
Zeile 1550: | Zeile 1623: | ||
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