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Beide Seiten der vorigen Revision Vorhergehende Überarbeitung Nächste Überarbeitung | Vorhergehende Überarbeitung | ||
circuit_design:2_diodes [2023/09/19 22:16] – mexleadmin | circuit_design:2_diodes [2024/11/29 01:01] (aktuell) – [Bearbeiten - Panel] mexleadmin | ||
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In metals, electrons are free to move. If an external voltage is applied, they follow the potential difference to the positive electrode: current flows. In insulators, on the other hand, the electrons are firmly bound to the atomic trunks. If a voltage is applied, they can at best be polarized. No current flows. | In metals, electrons are free to move. If an external voltage is applied, they follow the potential difference to the positive electrode: current flows. In insulators, on the other hand, the electrons are firmly bound to the atomic trunks. If a voltage is applied, they can at best be polarized. No current flows. | ||
- | A semiconductor is a material whose conductivity lies between that of metals and that of insulators. The technologically most important example of a semiconductor is silicon. In the silicon crystal, the electrons are not freely movable as in metal, because they are bound to the atomic trunks. | + | A semiconductor is a material whose conductivity lies between that of metals and that of insulators. The technologically most important example of a semiconductor is silicon. In the silicon crystal, the electrons are not freely movable as in metal, because they are bound to the atomic trunks. |
A hole with a positive electrical charge is created at the silicon atom from which the electron was removed. This is also called a defect electron. These holes can also move through the crystal lattice and thus generate an electric current. This is called **hole conduction**. Hole conduction can be thought of as a hole being filled by an electron from the neighboring atom. However, this creates a hole in the neighboring atom. Effectively, | A hole with a positive electrical charge is created at the silicon atom from which the electron was removed. This is also called a defect electron. These holes can also move through the crystal lattice and thus generate an electric current. This is called **hole conduction**. Hole conduction can be thought of as a hole being filled by an electron from the neighboring atom. However, this creates a hole in the neighboring atom. Effectively, | ||
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===== 2.3 Special diodes ===== | ===== 2.3 Special diodes ===== | ||
- | So far the silicon PN diode and the Z-diode | + | So far the silicon PN diode and the Z-diode |
- | ==== 2.3.1 Diodes for Electic | + | ==== 2.3.1 Diodes for Electric |
==== Germanium diode ==== | ==== Germanium diode ==== | ||
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<panel type=" | <panel type=" | ||
- | The following simulation includes multiple diodes. Assume a simple diode model (the forward voltage drop is $V_F=0.7~\rm V$ and constant). The source voltage shall be $U0 = 4~\rm V$. | + | The following simulation includes multiple diodes. Assume a simple diode model (the forward voltage drop is $V_F=0.6~\rm V$ and constant). The source voltage shall be $U0 = 4~\rm V$. |
Calculate the currents through $D1$, $R1$, and $R2$. | Calculate the currents through $D1$, $R1$, and $R2$. | ||
- | {{url> | + | {{url> |
</ | </ | ||
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====== Study Questions ====== | ====== Study Questions ====== | ||
=== For self-study === | === For self-study === | ||
- | * On a U-I diagram, draw the characteristic | + | * On a U-I diagram, draw the characteristics |
* What is meant by N-doped and P-doped? | * What is meant by N-doped and P-doped? | ||
* How does a junction form inside the diode? | * How does a junction form inside the diode? | ||
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=== with answers === | === with answers === | ||
- | <quizlib id="quiz" rightanswers=" | + | <WRAP hide> |
- | + | ||
- | < | + | <WRAP column half> |
+ | <panel type=" | ||
+ | <quizlib id=" | ||
+ | < | ||
P-doping produces quasi-free electrons| | P-doping produces quasi-free electrons| | ||
- | Conductivity in semiconductors happens via conduction and valence band| | + | Conductivity in semiconductors happens via the conduction |
The diode blocks at any negative voltage (reverse voltage).| | The diode blocks at any negative voltage (reverse voltage).| | ||
The diode can be modeled as a voltage source and capacitor | The diode can be modeled as a voltage source and capacitor | ||
- | </ | + | </ |
- | + | ||
+ | <panel type=" | ||
+ | <quizlib id=" | ||
< | < | ||
temperature| | temperature| | ||
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LED color| | LED color| | ||
breakdown voltage of the Z-diode | breakdown voltage of the Z-diode | ||
- | </ | + | </ |
- | + | ||
+ | <panel type=" | ||
+ | <quizlib id=" | ||
< | < | ||
There is no electric field in the junction| | There is no electric field in the junction| | ||
Zeile 419: | Zeile 426: | ||
The junction is enlarged in the Schottky diode compared to the PN diode| | The junction is enlarged in the Schottky diode compared to the PN diode| | ||
The junction forms a capacitor | The junction forms a capacitor | ||
- | </ | + | </ |
- | + | ||
+ | </ | ||
+ | <panel type=" | ||
+ | <quizlib id=" | ||
+ | < | ||
+ | ... for silicon is fixed about 0.6 ... 0.7 V| | ||
+ | ... serves to allow electrons to cross the bandgap| | ||
+ | ... depends on the current range under consideration| | ||
+ | ... is smaller for germanium diodes than for silicon diodes. | ||
+ | </ | ||
+ | |||
+ | <panel type=" | ||
+ | <quizlib id=" | ||
< | < | ||
Photon capture can move electrons from the conduction band to the valence band| | Photon capture can move electrons from the conduction band to the valence band| | ||
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A donor creates one or more quasi-free electrons| | A donor creates one or more quasi-free electrons| | ||
The band gap indicates the maximum energetic distance between the conduction and valence bands | The band gap indicates the maximum energetic distance between the conduction and valence bands | ||
- | </ | + | </ |
- | + | ||
- | <question title="The forward voltage ..." | + | <panel type="info" |
- | ... for silicon is about 0.6 ... 0.7 V| | + | <quizlib id=" |
- | ... serves to allow electrons to cross the bandgap| | + | |
- | ... depends on the current range under consideration| | + | |
- | ... is smaller for germanium diodes than for silicon diodes. | + | |
- | </question> | + | |
- | + | ||
< | < | ||
... Is dependent on the temperature| | ... Is dependent on the temperature| | ||
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... is logarithmic concerning the forward voltage| | ... is logarithmic concerning the forward voltage| | ||
... depends on the reverse voltage | ... depends on the reverse voltage | ||
- | </ | + | </ |
- | </ | + | </WRAP> |